论文标题
INAS/GAAS（001）亚层量子点的横截面扫描隧道显微镜
Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots
论文作者
论文摘要
横截面扫描隧道显微镜（X-STM）被用来表征在（2x4）和C（4x4）表面重建的情况下，在SI掺杂GAA（001）底物的顶部生长在SI掺杂GAA（001）底物上的INAS子单层量子点（SMLQD）。多层在不同的条件下生长，以研究其对SMLQD的形成，形态和局部组成的影响。通过填充和空态成像观察到SMLQD的形态和组成变化。 SMLQDS层中依赖性分离的详细分析通过与标准隔离模型拟合局部im浓浓度曲线来描述。观察并报告了砷通量对SMLQDS和Indium掺入形成的强大影响。我们研究了形成SMLQD的Ingaas量子井（QW）的宽宽度波动。与所有层中更明显的组成波动相比，井宽的单层波动是可忽略的。关键字：子单层量子点，表面重建，X-STM，indium隔离
Cross-sectional scanning tunneling microscopy (X-STM) was employed to characterize the InAs submonolayer quantum dots (SMLQDs) grown on top of a Si-doped GaAs(001) substrate in the presence of (2X4) and c(4X4) surface reconstructions. Multiple layers were grown under different conditions to study their effects on the formation, morphology and local composition of the SMLQDs. The morphological and compositional variations in SMLQDs were observed by both filled and emptystate imaging. A detailed analysis of indium segregation in the SMLQDs layers was described by fitting local indium concentration profile with a standard segregation model. A strong influence of arsenic flux over the formation of the SMLQDs and indium incorporation was observed and reported. We investigated the well-width fluctuations of the InGaAs quantum well (QW) in which SMLQDs were formed . The monolayer fluctuations of the well width were negligible compared to the more pronounced compositional fluctuations in all the layers. Keywords: Submonolayer quantum dots, Surface reconstruction, X-STM, Indium segregation
