论文标题
紫外线/近IIR双谱带光电探测器基于p-gan/α-In2se3杂结
UV/Near-IR dual band photodetector based on p-GaN/α-In2Se3 heterojunction
论文作者
论文摘要
在本报告中，我们演示了双带垂直异质结光检测器通过将α-In2Se3与p型GAN整合在一起而实现的。在硅底物上生长的p-gan上，将厚度约110 nm的薄片剥落。设备在光谱响应中显示了两个不同的检测峰，一个在365 nm处显示出，另一个在850 nm处显示，分别对应于GAN和α-IN2SE3的带边缘，可见光谱中有相当大的排斥反应。在365 nm和850 nm的偏置中，归一化的响应性值在-3V的365 nm和850 nm处为〜70 mA/w，其摄影电流比为〜665 〜665和〜75。这些设备还显示出快速的瞬态响应，没有持续的光电导率（PPC）。估计的特定检测值分别为〜10^11琼斯，〜10^10琼斯分别对应于365 nm和850 nm的照明。在365 nm的光谱响应性分析中，观察到〜0.4的良好线性性。还研究了设备性能，退火后。这项研究有望通过整合直接带隙分层材料（如α-In2Se3和宽带隙半导体）来为新型的光电设备铺平方法。
In this report, we demonstrate dual band vertical heterojunction photodetector realized by integrating α-In2Se3 with p-type GaN. Flakes of ~ 110 nm thickness were exfoliated on MOCVD grown p-GaN on silicon substrate. Devices showed two distinct detection peaks in spectral responsivity, one at 365 nm and another at 850 nm, corresponding to band edges of GaN and α-In2Se3 respectively, with considerable rejection in visible spectrum. Normalised responsivity values were found out to be ~70 mA/W at both 365 nm and 850 nm for the bias of -3V along with photo-to-dark current ratio of ~665 and ~75 in that order. The Devices also showed fast transient response with no persistent photoconductivity (PPC). The specific detectivity values estimated were ~10^11 Jones and ~10^10 Jones corresponding to illumination at 365 nm and 850 nm respectively. A good linearity of ~0.4 was observed in power dependent analysis of spectral responsivity at 365 nm. The device performance, post annealing was also studied. This study is expected to pave way for new type of optoelectronic devices by integrating direct bandgap layered material like α-In2Se3 and wide bandgap semiconductors.
