论文标题
半身抗抗铁磁铁的分子束外延cumnsb
Molecular beam epitaxy of the half-Heusler antiferromagnet CuMnSb
论文作者
论文摘要
我们报告了通过INAS（001）底物上的分子束外延的CumnsB薄膜生长。由于晶格不匹配，CumnSB层压缩了（$ 0.6〜 \ text {％} $）。根据高分辨率X射线衍射，薄膜具有$ω$的全宽度最大$ 7.7^{''} $，并且由原子力显微镜确定的均值为0.14〜 $ 0.14〜 \ text {nm} $的根平方粗糙度。发现磁性和电性能与大量样品的报告值一致。我们发现Néel温度为$ 62〜 \ text {k} $，curie-weiss温度为$ -65〜 \ text {k} $，$ 5.9〜μ _ {\ text {b}}/\ text {f.u .u。} $的有效力矩为$ 5.9〜μ_ {\ text {b}}}/\ text {b}}/\传输测量确认了反铁质学转变，并显示了$ 4〜 \ text {k} $ $ 35〜μmommant \ cdot \ cdot \ text {cm} $的剩余电阻率。
We report growth of CuMnSb thin films by molecular beam epitaxy on InAs(001) substrates. The CuMnSb layers are compressively strained ($0.6~\text{%}$) due to lattice mismatch. The thin films have a $ω$ full width half max of $7.7^{''}$ according to high resolution X-ray diffraction, and a root mean square roughness of $0.14~\text{nm}$ as determined by atomic force microscopy. Magnetic and electrical properties are found to be consistent with reported values from bulk samples. We find a Néel temperature of $62~\text{K}$, a Curie-Weiss temperature of $-65~\text{K}$ and an effective moment of $5.9~μ_{\text{B}}/\text{f.u.}$. Transport measurements confirm the antiferromagetic transition and show a residual resistivity at $4~\text{K}$ of $35~μΩ\cdot \text{cm}$.
