论文标题
通过原子探针层析成像直接观察Si掺杂（ALXGA1-X）2O3中位点特异性掺杂剂取代
Direct observation of site-specific dopant substitution in Si doped (AlxGa1-x)2O3 via Atom Probe Tomography
论文作者
论文摘要
在这项工作中，使用ATOM探针断层扫描分析了在整个组成范围内（X = 0-100％）在SI（Alxga1-X）2O3膜中具有不同含量的N型掺杂剂的相互作用。在所有（Alxga1-X）2O3层中，在包含不同含量的所有（Alxga1-X）2O3层中获得了掺杂密度的几乎均匀的掺杂剂分布。我们已经证明，对于单相\ b {eta} - （alxga1-x）2O3膜的X含量为X <0.30，掺杂剂更喜欢在GA位点上占用，而Al位点则优先使用Al Site，而对于高含量（x> 0.50）（x> 0.50）（Alxga1-X）2O3层。还观察到了Al含量，X = 0.30-0.50，未观察到特定的阳离子位点占用率，SI占Al或GA位点。这可以归因于该组成范围内高度不均匀的层，因此，掺杂剂Si原子在富含Al的或depled的区域中。
In this work, the interaction of n-type dopants in Si doped (AlxGa1-x)2O3 films with varying Al content over the entire composition range (x = 0-100%) was analyzed using atom probe tomography. An almost uniform dopant distribution with dopant density in the range of 1018 cm-3 was obtained in all (AlxGa1-x)2O3 layers containing different Al contents. We have demonstrated that for the single phase \b{eta}-(AlxGa1-x)2O3 films with Al content of x<0.30, dopants prefer to occupy on Ga sites while Al site is preferred for high Al content (x>0.50) (AlxGa1-x)2O3 layers. It was also observed for Al content, x = 0.30-0.50, no specific cationic site occupancy was observed, Si occupies either Al or Ga sites. This can be attributed to highly inhomogeneous layers within this composition range due to which dopant Si atoms are either in the Al-rich or Al-depleted regions.
