论文标题
基于马尔可夫跳跃过程的概率电阻开关设备建模
Probabilistic Resistive Switching Device modeling based on Markov Jump processes
论文作者
论文摘要
在这项工作中，首次提出了电阻开关（RS）设备的多状态概率建模的多功能数学框架。组合了Memristor和Markov跳跃过程的数学公式，并通过使用有限态的主方程概念的概念，RS设备的固有概率时间进化已足够建模。特别是，该方法足够通用，可以适用于$ n $状态；作为概念证明，两国RS范式（即$ n = 2 $和多状态设备）进一步强调了拟议的框架，即$ n = 4 $。提出的I-V结果以定性和定量的方式证明，与其他建模方法进行了足够的匹配。
In this work, a versatile mathematical framework for multi-state probabilistic modeling of Resistive Switching (RS) devices is proposed for the first time. The mathematical formulation of memristor and Markov jump processes are combined and, by using the notion of master equations for finite-states, the inherent probabilistic time-evolution of RS devices is sufficiently modeled. In particular, the methodology is generic enough and can be applied for $N$ states; as a proof of concept, the proposed framework is further stressed for both two-state RS paradigm, namely $N=2$, and multi-state devices, namely $N=4$. The presented I-V results demonstrate in a qualitative and quantitative manner, adequate matching with other modeling approaches.
