论文标题

多政治EUTL2的拓扑后代

Topological Descendants of Multicritical EuTl2

论文作者

Wang, Lin-Lin, Po, Hoi Chun, Slager, Robert-Jan, Vishwanath, Ashvin

论文摘要

过去几十年来,在表征具有拓扑结构的冷凝物质系统方面发生了转变。在最近出现的晶体对称性的拓扑带结构的精致理解的帮助下,已经鉴定出许多电子相,并且预计已经有大量材料具有新颖的特性和功能。关于将来的应用,一个关键的基本问题也是可以在多大程度上操纵相关的物理特征,尤其是在磁顺序的情况下。在这里,我们描述了一种范式的半学,同时结合了多种,有时是冲突的拓扑结构,可确保无间隙,并导致一个异常丰富的后裔阶段家族,以降低对称性。我们预测这个多政治阶段将在EUTL2中实现。从母体半金属状态开始,该状态已经分开了两个拓扑绝缘状态,固有的磁性和应变的相互作用允许拓扑后代状态的异常丰富的相图。

The past decades have witnessed a transformation in characterizing condensed matter systems with topology. Aided by a refined understanding of topological band structures with crystalline symmetries that has emerged recently, many electronic phases have been identified and a plethora of materials have been predicted to host novel properties and functionalities. A key underlying question, also with respect to future application, is to what extent the related physical features can be manipulated, especially in the context of magnetic order. Here we describe a paradigmatic semimetal that simultaneously incorporates multiple, and sometimes conflicting topology which guarantees gaplessness and leads to an exceptionally rich family of descendent phases on lowering symmetry. We predict that this multicritical phase is realized in EuTl2. Starting from the parent semimetallic state, which already separates two topological insulating regimes, the interplay of inherent magnetism and strain allows for an exceptionally rich phase diagram of topological descendant states.

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