论文标题
通过电子通道的纳米级写作来控制还原石墨烯的宏观电气特性
Controlling the macroscopic electrical properties of reduced graphene oxide by nanoscale writing of electronic channels
论文作者
论文摘要
所有碳电子产品的魅力源于物理特性中的所有同素异性植物的传播。该计划还具有独特的挑战,例如带隙的可调性,掺杂和缺陷控制的可变性。在这里,我们探索了扫描探针尖端诱导的氧化石墨烯(GO)的纳米级还原的技术,该技术可将导电构成,SP2富含SP2的石墨区域在绝缘GO的背景下。直接写作的灵活性通过宏观控制参数补充了对带隙的降低程度和可调性的控制。通过表面电位计量法研究了制造的减少 - 通过光谱和依赖的电气传输的GO通道和随后的设备,以及依赖于电气传输的温度和偏置和偏置与空间分辨的电子性质相关。相分离的SP2/SP3结构域引起的载体定位效应以及跨通道的非线性转运反映了局部分离的SP2/SP3结构域以及局部局部电场波动的大型。结果共同表明,根据材料的电子状态,可以通过隧道,可变范围跳动或激活的复杂运输现象。
The allure of all carbon electronics stems from the spread in physical properties, across all its allotropes. The scheme also harbours unique challenges, like tunability of band-gap, variability of doping and defect control. Here, we explore the technique of scanning probe tip induced nanoscale reduction of graphene oxide (GO), which nucleates conducting, sp2 rich graphitic regions on the insulating GO background. Flexibility of direct writing is supplemented with control over degree of reduction and tunability of bandgap, through macroscopic control parameters. The fabricated reduced - GO channels and ensuing devices are investigated via spectroscopic, and temperature and bias dependent electrical transport and correlated with spatially resolved electronic properties, using surface potentiometry. Presence of carrier localization effects, induced by the phase-separated sp2/sp3 domains, and large local electric field fluctuations are reflected in the non-linear transport across the channels. Together the results indicate a complex transport phenomena which may be variously dominated by tunnelling, variable range hopping or activated depending on the electronic state of the material.