论文标题
SB掺杂的BI2SE3拓扑绝缘子纳米替孔中的栅极调节量子干扰振荡
Gate-Modulated Quantum Interference Oscillations in Sb-Doped Bi2Se3 Topological Insulator Nanoribbon
论文作者
论文摘要
拓扑绝缘子纳米纤维（TI NRS）为探索拓扑表面状态的相位量子电子传输提供了有用的平台，这对于拓扑量子设备的开发至关重要。当用轴向磁场施加时，Ti NR表现出磁性（MC）振荡，磁通周期为H/E，即Aharonov-Bohm（Ab）振荡，H/2E，即AltShuler-Aronov-Spivak（AAS）振荡。本文中，我们对SB掺杂的BI $ _2 $ SE $ _3 $ ti nr的AB和AAS振荡进行了广泛的研究，这是栅极电压的函数，揭示了相位降级的拓扑AB振荡。此外，对VG依赖性MC曲线的集合平均快速转换分析表明，数Dirac点附近的量子干扰振荡振幅抑制，这归因于低载体密度区域内相干长度的抑制。垂直MC曲线上的弱抗静电分析证实了Ti NR中狄拉克点附近的抑制相干长度的概念。
Topological insulator nanoribbons (TI NRs) provide a useful platform to explore the phase-coherent quantum electronic transport of topological surface states, which is crucial for the development of topological quantum devices. When applied with an axial magnetic field, the TI NR exhibits magnetoconductance (MC) oscillations with a flux period of h/e, i.e., Aharonov-Bohm (AB) oscillations, and h/2e, i.e., Altshuler-Aronov-Spivak (AAS) oscillations. Herein, we present an extensive study of the AB and AAS oscillations in Sb doped Bi$_2$Se$_3$ TI NR as a function of the gate voltage, revealing phase-alternating topological AB oscillations. Moreover, the ensemble-averaged fast Fourier transform analysis on the Vg dependent MC curves indicates the suppression of the quantum interference oscillation amplitudes near the Dirac point, which is attributed to the suppression of the phase coherence length within the low carrier density region. The weak antilocalization analysis on the perpendicular MC curves confirms the idea of the suppressed coherence length near the Dirac point in the TI NR.
