论文标题
$ \ require {mhchem} $ misfit阶段$ \ ce {（bise）_ {$ 1.10 $} nbse2} $作为nobium-Doped Bismuth selenide中超导的起源
$\require{mhchem}$Misfit phase $\ce{(BiSe)_{$1.10$}NbSe2}$ as the origin of superconductivity in nobium-doped bismuth selenide
论文作者
论文摘要
$ \ require {mhchem} $拓扑超导性具有极大的现代兴趣，并已在掺杂的$ \ ce {bi2se3} $中提出，其中电子唐原子（例如cu，sr或nb）已插入到$ \ ce {bi2se3} $结构中。对于$ \ ce {nb_ {x} bi2se3} $，$ \ text {t} _ \ text {c} \ sim 3 \ sim 3 \ \ text {k} $，在文献中假定nb插入了van der wa waals差距中。但是，在这项工作中，建立了NB掺杂$ \ ce {bi2se3} $中超导性的替代起源。与以前的报告相反，可以推断出$ \ ce {bi2se3} $中的NB插入不会发生。取而代之的是，在名义构图样本$ \ ce {nb_ {x} bi2se3} $样本中的超导行为是从$ \ ce {（bise）_ {$ 1.10 $} nbse2} $ flit阶段的$ \ ce {（bise）_ {$ 1.10 $} （$ x = 0.50 $）。使用X射线衍射和透射电子显微镜技术的组合详细研究了此不合适阶段的结构。
$\require{mhchem}$Topological superconductivity is of great contemporary interest and has been proposed in doped $\ce{Bi2Se3}$ in which electron-donating atoms such as Cu, Sr or Nb have been intercalated into the $\ce{Bi2Se3}$ structure. For $\ce{Nb_{x}Bi2Se3}$, with $\text{T}_\text{c} \sim 3 \ \text{K}$, it is assumed in the literature that Nb is inserted in the van der Waals gap. However, in this work an alternative origin for the superconductivity in Nb-doped $\ce{Bi2Se3}$ is established. In contrast to previous reports, it is deduced that Nb intercalation in $\ce{Bi2Se3}$ does not take place. Instead, the superconducting behaviour in samples of nominal composition $\ce{Nb_{x}Bi2Se3}$ results from the $\ce{(BiSe)_{$1.10$}NbSe2}$ misfit phase that is present in the sample as an impurity phase for small $x$ ($0.01 \leq x \leq 0.10$) and as a main phase for large $x$ ($x = 0.50$). The structure of this misfit phase is studied in detail using a combination of X-ray diffraction and transmission electron microscopy techniques.
