论文标题

从异常到正常:二维黑磷中带隙的温度依赖性

From Anomalous to Normal: Temperature Dependence of the Band Gap in Two-Dimensional Black Phosphorus

论文作者

Huang, Shenyang, Wang, Fanjie, Zhang, Guowei, Song, Chaoyu, Lei, Yuchen, Xing, Qiaoxia, Wang, Chong, Zhang, Yujun, Zhang, Jiasheng, Xie, Yuangang, Mu, Lei, Cong, Chunxiao, Huang, Mingyuan, Yan, Hugen

论文摘要

条带隙的温度依赖性对于半导体至关重要。已知散装黑磷(BP)表现出异常行为。通过光谱法,我们在这里表明,对BP带隙的温度影响随着层数的减少而逐渐发展,最终在单层极限中变成了正常的效果,从而使从异常到正常的交叉变为正常。同时,对于相同的厚度样品,温度引起的光学共振的变化也不同于不同的过渡指数。一项全面的分析表明,可触发温度的层间耦合是造成观察到的各种情况的原因。我们的研究为某些分层半导体中异常温度行为的忧虑提供了关键。

The temperature dependence of the band gap is crucial to a semiconductor. Bulk black phosphorus (BP) is known to exhibit an anomalous behavior. Through optical spectroscopy, here we show that the temperature effect on BP band gap gradually evolves with decreasing layer number, eventually turns into a normal one in the monolayer limit, rendering a crossover from the anomalous to the normal. Meanwhile, the temperature-induced shift in optical resonance also differs with different transition indices for the same thickness sample. A comprehensive analysis reveals that the temperature-tunable interlayer coupling is responsible for the observed diverse scenario. Our study provides a key to the apprehension of the anomalous temperature behavior in certain layered semiconductors.

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