论文标题
疏水水合在电气金/水界面上的尺寸依赖性
Size-dependence of hydrophobic hydration at electrified gold/water interfaces
论文作者
论文摘要
金属/水界面的疏水性水合积极促进电化学反应的能量学,例如CO $ _2 $和N $ _2 $减少,其中涉及小的疏水分子。在这项工作中,采用恒定的施加潜在分子动力学来研究金/水界面的疏水水分。我们提出了Lum-Chandler-Weeks(LCW)理论的扩展,以描述界面处的疏水性水合的自由能,这是溶质大小和施加电压的函数。基于此模型,我们能够直接从散装中的自由能成本以及界面依赖性校正项中直接预测界面处的空腔形成的自由能成本。界面水网络对自由能的偏好显着贡献,这些自由能偏爱在金表面上的外向吸附,以实现理想的疏水物。我们预测,与CO或N $ _2 $相当的小疏水溶质的堆积,而在界面上,较大的疏水物(高于2.5 Angstrom半径)的较大疏水物的自由能成本比在整体上大。有趣的是,还发现,从批量的LCW理论预测的统治的体积转变为主导的机制,在AU/水界面处的疏水物进行了,但发生在较小的空腔半径。通过将扩展的LCW理论应用于简单的模型添加反应,我们说明了我们发现对电化学反应的一些含义。
Hydrophobic hydration at metal/water interfaces actively contributes to the energetics of electrochemical reactions, e.g. CO$_2$ and N$_2$ reduction, where small hydrophobic molecules are involved. In this work, constant applied potential molecular dynamics is employed to study hydrophobic hydration at a gold/water interface. We propose an extension of the Lum-Chandler-Weeks (LCW) theory to describe the free energy of hydrophobic hydration at the interface as a function of solute size and applied voltage. Based on this model we are able to predict the free energy cost of cavity formation at the interface directly from the free energy cost in the bulk plus an interface-dependent correction term. The interfacial water network contributes significantly to the free energy yielding a preference for outer-sphere adsorption at the gold surface for ideal hydrophobes. We predict an accumulation of small hydrophobic solutes of sizes comparable to CO or N$_2$, while the free energy cost to hydrate larger hydrophobes, above 2.5 Angstrom radius, is shown to be greater at the interface than in the bulk. Interestingly, the transition from the volume dominated to the surface dominated regimes predicted by the LCW theory in the bulk is also found to take place for hydrophobes at the Au/water interface, but occurs at smaller cavity radii. By applying the extended LCW theory to a simple model addition reaction, we illustrate some implications of our findings for electrochemical reactions.