论文标题
建模二维半导体中的激子莫特过渡
Modelling excitonic Mott transitions in two-dimensional semiconductors
论文作者
论文摘要
我们分析了影响二维半导体光学特性的许多粒子相关性。这些相关性通过特定的光学共振（例如激子，TRIONS等）表现出来。从通用的电子孔哈密顿式开始，并采用微观的Heisenberg运动方程，可以获得微分方程的无限层次结构。为了使系统解次，我们解决了群集扩展技术，该技术提供了一个定期的程序，该过程将许多粒子相关贡献构成到频带间极化动力学中。特别是，部分考虑到三粒子相关性，随着兴奋型峰的出现而改变了吸收光谱的行为。与许多其他方法相反，提出的一种方法使我们能够对2D半导体的光学响应进行建模，而当费米能量处于激子和TRION结合能量的顺序时，因此我们可以严格地模拟激发型Mott Mott Transition的开始，最近在2D半指导器中研究了该机制，例如在各种半指导器中进行了研究。
We analyze the many-particle correlations that affect the optical properties of two-dimensional semiconductors. These correlations manifest themselves through the specific optical resonances such as excitons, trions, etc. Starting from the generic electron-hole Hamiltonian and employing the microscopic Heisenberg equation of motion the infinite hierarchy of differential equations can be obtained. In order to decouple the system we address the cluster expansion technique which provides a regular procedure of consistent accounting of many-particle correlation contributions into the interband polarization dynamics. In particular, the partially taken into account three-particle correlations modify the behavior of absorption spectra with the emergence of a trion-like peak additional to excitonic ones. In contrast to many other approaches, the proposed one allows us to model the optical response of 2d semiconductors in the regime when the Fermi energies are of the order of the exciton and trion binding energies, thus allowing us to rigorously model the onset of the excitonic Mott transition, the regime being recently studied in various 2d semiconductors, such as transition metal dichalcogenides.
