论文标题
使用微结构电极中的集成硅酸锂调节液中的破坏电压带宽极限
Breaking voltage-bandwidth limits in integrated lithium niobate modulators using micro-structured electrodes
论文作者
论文摘要
具有低压和较大带宽的电气调节器对于模拟和数字通信都至关重要。最近，通过降低所需的调制电压，在保持高带宽的同时，薄膜硅锂调节器可以通过降低所需的调制电压进行巨大的性能改善。但是，此类调节剂中的电极间隙减少导致微波损耗明显更高，从而限制了高频率的电形性能。在这里，我们克服了这一局限性，并实现了低RF半波电压为1.3 V的创纪录组合，同时以50 GHz的速度保持1.8 dB滚动电响应。该演示是电压带宽极限的显着改善，这与从传统散装转换为薄膜锂调节器时所实现的限制相当。利用低损耗电极几何形状，我们表明可以启用具有$> $ 100 GHz带宽的子伏特调制器。
Electro-optic modulators with low voltage and large bandwidth are crucial for both analog and digital communications. Recently, thin-film lithium niobate modulators have enable dramatic performance improvements by reducing the required modulation voltage while maintaining high bandwidths. However, the reduced electrode gaps in such modulators leads to significantly higher microwave losses, which limit electro-optic performance at high frequencies. Here we overcome this limitation and achieve a record combination of low RF half-wave voltage of 1.3 V while maintaining electro-optic response with 1.8-dB roll-off at 50 GHz. This demonstration represents a significant improvement in voltage-bandwidth limit, one that is comparable to that achieved when switching from legacy bulk to thin-film lithium niobate modulators. Leveraging the low-loss electrode geometry, we show that sub-volt modulators with $>$ 100 GHz bandwidth can be enabled.
