论文标题
电子腔中局部状态密度的成像特征
Imaging signatures of the local density of states in an electronic cavity
论文作者
论文摘要
我们使用扫描门显微镜通过GA（Al）中的开放式栅极谐振器作为异质结构来研究电子传输。栅极扫描谐振器上方的电压偏置金属尖端，我们观察到不同的电导调制作为尖端位置和电压的函数。量子机械模拟再现了这些电导调制，并揭示了它们与谐振器中状态部分局部密度的关系。我们的测量结果说明了使用扫描门显微镜在掩埋电子系统中成像状态的局部密度的可能性和局限性之间的当前边界。
We use Scanning Gate Microscopy to study electron transport through an open, gate-defined resonator in a Ga(Al)As heterostructure. Raster-scanning the voltage-biased metallic tip above the resonator, we observe distinct conductance modulations as a function of the tip-position and voltage. Quantum mechanical simulations reproduce these conductance modulations and reveal their relation to the partial local density of states in the resonator. Our measurements illustrate the current frontier between possibilities and limitations in imaging the local density of states in buried electron systems using scanning gate microscopy.
