论文标题
硅Nanosandwich结构的分数电导的相位控制
Phase control of the fractional conductance of silicon nanosandwich-structures
论文作者
论文摘要
We present the experimental data of the electric features of the silicon nanosandwichstructures obtained by silicon planar technology in the frameworks of the Hall geometry that represent the ultra-shallow silicon quantum well of 2 nm wide that are confined by delta-barrier heavily doped with boron, which create the edge channels used as the phase controllers of electric signals.似乎限制边缘通道的负-U偶极硼中心的形成导致有效的质量下降并相应地减少电子电子相互作用，从而导致高温下高温下的宏观量子现象到室温。通过更改源液电流的大小或在Quantum faraday效应中施加到硅纳米翼固有的外栅极的电压来观察纵向电导的相位控制。
We present the experimental data of the electric features of the silicon nanosandwichstructures obtained by silicon planar technology in the frameworks of the Hall geometry that represent the ultra-shallow silicon quantum well of 2 nm wide that are confined by delta-barrier heavily doped with boron, which create the edge channels used as the phase controllers of electric signals. The formation of the negative-U dipole boron centers, which appear to confine the edge channels, results in the effective mass dropping and corresponding reduction of the electron-electron interaction thereby giving rise to the macroscopic quantum phenomena at high temperatures up to room temperature. The phase control of the longitudinal conductance is observed by changing either the magnitude of the source-drain current or the voltage applied to the external gate of the silicon nanosandwiches within the quantum Faraday effect.
