论文标题

在wse $ _2 $单层中,激子的不均匀合奏中的非质量光发光动力学

Nonexponential photoluminescence dynamics in an inhomogeneous ensemble of excitons in WSe$_2$ monolayers

论文作者

Akmaev, M. A., Kochiev, M. V., Duleba, A. I., Pugachev, M. V., Kuntsevich, A. Yu., Belykh, V. V.

论文摘要

在广泛的范围的性交和激发能力上,研究了通过机械去角质在SI/SIO $ _2 $底物上获得的机械去角质获得的过渡金属二进制二分法WSE WSE $ _2 $的光致发光的光谱和时空动力学。结果表明,激发脉冲之后的动力学不是$ \ sim $ 50 ps的时间,用$ 1/(t+t_0)$的依赖性描述了$ \ sim $ \ sim $ 50。光致发光衰减会随温度降低以及发射状态能量的降低而加速。结果表明,观察到的动力学无法通过双分子重组过程(例如激子 - exciton an灭)来描述。一个模型,通过考虑到随机势中局部激子状态的辐射重组时间的扩散,可以很好地与实验数据一致。

The spectral and spatiotemporal dynamics of photoluminescence in monolayers of transition metal dichalcogenide WSe$_2$ obtained by mechanical exfoliation on a Si/SiO$_2$ substrate is studied over a wide range of temperatures and excitation powers. It is shown that the dynamics is nonexponential and, for times $t$ exceeding $\sim$50 ps after the excitation pulse, is described by a dependence of the form $1/(t+t_0)$. Photoluminescence decay is accelerated with a decrease in temperature, as well as with a decrease in the energy of emitting states. It is shown that the observed dynamics cannot be described by a bimolecular recombination process, such as exciton--exciton annihilation. A model that describes the nonexponential photoluminescence dynamics by taking into account the spread of radiative recombination times of localized exciton states in a random potential gives good agreement with experimental data.

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