论文标题
在狭窄差距半导体中与频带反演的相互作用的费米子
Interacting fermions in narrow-gap semiconductors with band inversion
论文作者
论文摘要
热力学反应函数的高度非常规行为已在狭窄的间隙半导体samarium hexaboride中进行了实验观察到。通过这些观察结果，我们使用重新归一化组技术来研究具有较弱耦合极限的F轨道窄间隙半导体中的多体不稳定性。在投影了F-轨道状态的双重占用率后，我们制定了一种低能量理论，该理论描述了两个杂交电子和孔样带中的相互作用颗粒。相互作用被认为是弱且短距离的。我们考虑了每个频段中准粒子的有效质量之间的差异。在进行重新归一化组分析后，我们发现只有一个稳定的固定点对应于激子不稳定性，而有效质量之间的不匹配足够小。
Highly unconventional behavior of the thermodynamic response functions has been experimentally observed in a narrow gap semiconductor samarium hexaboride. Motivated by these observations, we use renormalization group technique to investigate many-body instabilities in the f-orbital narrow gap semiconductors with band inversion in the limit of weak coupling. After projecting out the double occupancy of the f-orbital states, we formulate a low-energy theory describing the interacting particles in two hybridized electron- and hole-like bands. The interactions are assumed to be weak and short-ranged. We take into account the difference between the effective masses of the quasiparticles in each band. Upon carrying out the renormalization group analysis we find that there is only one stable fixed point corresponding to the excitonic instability with time-reversal symmetry breaking for small enough mismatch between the effective masses.
