论文标题
Cu-Doped \ b {eta} -ga2o3中持续的室温光电标记
Persistent room temperature photodarkening in Cu-doped \b{eta}-Ga2O3
论文作者
论文摘要
Beta-GA2O3是一种超宽的带隙半导体，在电力电子中具有新兴应用。引入受体掺杂剂会产生薄膜设备所需的半绝缘底物。在目前的工作中，证明将Cu掺杂的Ga2O3暴露于紫外线> 4 eV中会导致持续的照片引起的室温下的变暗。电子顺磁共振光谱表明，光暴露将Cu2+转换为Cu3+，Cu3+是一种罕见的氧化态，负责光学吸收。光电标记伴随着红外光谱中O-H振动模式的出现。混合功能计算表明，CU受体可以与掺入间质（HI）或替代（H_O）缺陷的氢供体有利复杂。当Cu_ga-H_O复合物吸收光时，释放氢，从而有助于观察到的Cu3+种类和O-H模式。
Beta-Ga2O3 is an ultra-wide bandgap semiconductor with emerging applications in power electronics. The introduction of acceptor dopants yields semi-insulating substrates necessary for thin-film devices. In the present work, exposure of Cu-doped Ga2O3 to UV light > 4 eV is shown to cause large, persistent photo-induced darkening at room temperature. Electron paramagnetic resonance spectroscopy indicates that light exposure converts Cu2+ to Cu3+, a rare oxidation state that is responsible for the optical absorption. The photodarkening is accompanied by the appearance of O-H vibrational modes in the infrared spectrum. Hybrid function calculations show that Cu acceptors can favorably complex with hydrogen donors incorporated as interstitial (Hi) or substitutional (H_O) defects. When Cu_Ga-H_O complexes absorb light, hydrogen is released, contributing to the observed Cu3+ species and O-H modes.
