论文标题

通过子漏极光激发对NIO抗铁磁秩序的超快操纵

Ultrafast manipulation of the NiO antiferromagnetic order via sub-gap optical excitation

论文作者

Wang, Xiaocui, Engel, Robin Y., Vaskivskyi, Igor, Turenne, Diego, Shokeen, Vishal, Yaroslavtsev, Alexander, Grånäs, Oscar, Knut, Ronny, Schunck, Jan O., Dziarzhytski, Siarhei, Brenner, Günter, Wang, Ru-Pan, Kuhlmann, Marion, Kuschewski, Frederik, Bronsch, Wibke, Schüßler-Langeheine, Christian, Styervoyedov, Andriy, Parkin, Stuart S. P., Parmigiani, Fulvio, Eriksson, Olle, Beye, Martin, Dürr, Hermann A.

论文摘要

NIO等宽频段绝缘子提供了令人兴奋的前景,即通过强烈的光场连贯地操纵电子相关性。与金属通过电子过程快速地启动光激发的金属相反,电荷转移绝缘子中的亚漏式激发已被证明可将其逐渐融合到低能量的波体激发。但是,目前尚不清楚玻色子敷料场是否由声子或磁子组成。在这里,我们使用典型的电荷转移绝缘子NIO来证明1.5 eV子隙光学激发会导致重量化的NiO带隙,并结合大幅度降低抗磁力磁性。我们在Flash自由电子激光器上采用特定元素的X射线反射率,以证明在O 1S-2P核心价值共振(K-EDGE)处的上频段边缘减少,而通过X射线磁性磁性线性二色症(XMLD)在Ni 2P-3D Resonance(XMLD)中探测了防牵引力磁性秩序。将瞬态XMLD光谱线形状与地面测量值进行比较,使我们能够提取超过400 fs的时间延迟的自旋温度升高为65 +/- 5 k,而在较早的时候,形成了非平衡旋转状态。我们确定在前200 fs中形成的瞬态中间隙状态,伴随着持续的带隙降低至少达到2.4 ps的最大测量时间延迟。电子结构计算表明,镁激发显着有助于减少NIO带隙。

Wide-band-gap insulators such as NiO offer the exciting prospect of coherently manipulating electronic correlations with strong optical fields. Contrary to metals where rapid dephasing of optical excitation via electronic processes occurs, the sub-gap excitation in charge-transfer insulators has been shown to couple to low-energy bosonic excitations. However, it is currently unknown if the bosonic dressing field is composed of phonons or magnons. Here we use the prototypical charge-transfer insulator NiO to demonstrate that 1.5 eV sub-gap optical excitation leads to a renormalised NiO band-gap in combination with a significant reduction of the antiferromagnetic order. We employ element-specific X-ray reflectivity at the FLASH free-electron laser to demonstrate the reduction of the upper band-edge at the O 1s-2p core-valence resonance (K-edge) whereas the antiferromagnetic order is probed via X-ray magnetic linear dichroism (XMLD) at the Ni 2p-3d resonance (L2-edge). Comparing the transient XMLD spectral line shape to ground-state measurements allows us to extract a spin temperature rise of 65 +/- 5 K for time delays longer than 400 fs while at earlier times a non-equilibrium spin state is formed. We identify transient mid-gap states being formed during the first 200 fs accompanied by a band-gap reduction lasting at least up to the maximum measured time delay of 2.4 ps. Electronic structure calculations indicate that magnon excitations significantly contribute to the reduction of the NiO band gap.

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