论文标题
可调磁力和独特的内层电荷转移在Janus Monolayer MNSSE中用于Spintronics应用
Electrically tunable magnetism and unique intralayer charge transfer in Janus monolayer MnSSe for spintronics applications
论文作者
论文摘要
通过纯电气手段控制二维(2D)材料的磁性和电子性能至关重要,并且高度高效率的旋转型旋转设备是至关重要的,因为与磁场相比,可以在本地轻松地应用电场。最近发现的2d Janus Crystals为纳米级电子和Spintronics提供了一个新的平台,因为它们的反转对称性质破裂。因此,固有的铁磁jauns单层及其可调的物理特性引起了极大的兴趣。在这里,通过全面的密度功能理论计算和蒙特卡洛模拟,我们揭示了单层MNSSE是一种固有的铁磁半金属,在旋转通道中的直接频带间隙为1.14 eV,居里温度为72 k的温度约为72k。可以通过孔和电子量相应地增强或quepterate coupling。特别是,少量的孔掺杂MNSSE可以在平面外和平面方向之间调整其磁化易于轴,这有利于设计2D自旋场效应晶体管以进行自旋依赖性转运。我们还首次发现了S和SE层之间可逆的纵向层间电荷转移,对所施加的外部电场高度敏感。有趣的是,电荷流和应用场的方向是相同的。该行为源于外部和内置领域的共存和/或竞争。这些发现以及出色的稳定性和较大的平面刚度,可以极大地促进基于2D MNSSE晶体的纳米级电子和旋转器设备的发展。
Controlling magnetism and electronic properties of two-dimensional (2D) materials by purely electrical means is crucial and highly sought for high-efficiency spintronics devices since electric field can be easily applied locally compared with magnetic field. The recently discover 2D Janus crystals has provide a new platform for nanoscale electronics and spintronics due to their broken inversion symmetry nature. The intrinsic ferromagnetic Jauns monolayer, and hence the tunable physical properties, is therefore of great interest. Here, through comprehensive density functional theory calculations and Monte Carlo simulations, we unveil that single-layer MnSSe is an intrinsic ferromagnetic half-metal with a direct band gap of 1.14 eV in spin-down channel and a Curie temperature of about 72 K. The exchange coupling can be significantly enhanced or quenched by hole and electron doping, respectively. In particular, a small amount of hole doping MnSSe can tune its magnetization easy axis in between out-of-plane and in-plane directions, which is conducive to designing 2D spin field-effect transistor for spin-dependent transport. We also find a reversible longitudinal interlayer charge transfer between S and Se layers for the first time that is highly sensitive to the applied external electric field. Interestingly, the directions of charge flow and the applied field are the same. The behavior originates from the coexistence and/or the competition of external and built-in fields. These findings, together with the excellent stability and large in-plane stiffness, can greatly facilitate the development of nanoscale electronics and spintronics devices based on 2D MnSSe crystal.