论文标题
弯曲基板上的晶界运动
Grain Boundary Motion on Curved Substrate
论文作者
论文摘要
晶界（GB）动力学对于2D材料和金属薄膜中的许多应用都很重要。为了研究底物形状如何影响GB的迁移率和动力学，我们通过结合断开连接理论和FOPPL von Karman方程来开发一种动力学蒙特卡洛（KMC）仿真方法和GB的分析模型。以正弦MOS2为例，我们可以通过改变底物形状振幅和周期来增加其GB迁移率的50倍以上。我们发现幅度呈指数变化GB迁移率，而波矢量则线性地改变GB迁移率。正弦GB动力学形状的波向量是底物的两倍，幅度与底物平方振幅成正比。
Grain boundary (GB) kinetics is important for many applications in 2d materials and metal thin films. To study how the substrate shape affects GB mobility and kinetics, we develop a kinetic Monte Carlo (kMC) simulation method and an analytical model for GBs on the curved substrate by combining disconnection theory and by Foppl von Karman equations. Using sinusoidal MoS2 as an example, we can increase its GB mobility more than 50 times by changing substrate shape amplitudes and periods. We find that amplitude change GB mobility exponentially while wave vector change GB mobility linearly. The sinusoidal GB kinetic shape has wave vector twice as substrate and amplitude proportional to substrate squared amplitude.
