论文标题
单个孔自旋具有增强的天然硅连贯性
A single hole spin with enhanced coherence in natural silicon
论文作者
论文摘要
基于自旋轨道状态的半导体旋转矩形对电场激发有响应，可以实用，快速且潜在的可扩展量量表。但是，自旋电敏感性使这些量子位通常容易受到电噪声的影响，从而限制了它们的连贯性时间。在这里，我们报告了一个旋转轨量子，该量子量子由一个固定硅金属氧化物 - 氧化物 - 氧化型固定器装置组成的单个孔组成。通过改变磁场方向，我们揭示了在保存有效的电偶极自旋控制的同时最小化电荷噪声影响的甜点的存在。我们相应地观察到Hahn-echo连贯性时间的扩展至88 $μ$ S，超过了孔旋转量矩孔的最佳数量级，并接近具有合成旋转轨道旋转量子的最先进的电子自旋量子，并在同位素纯化的Silicon中进行合成旋转轨道耦合。这一发现在很大程度上增强了基于硅的孔旋转量子的前景，以进行可扩展的量子信息处理。
Semiconductor spin qubits based on spin-orbit states are responsive to electric field excitation allowing for practical, fast and potentially scalable qubit control. Spin-electric susceptibility, however, renders these qubits generally vulnerable to electrical noise, which limits their coherence time. Here we report on a spin-orbit qubit consisting of a single hole electrostatically confined in a natural silicon metal-oxide-semiconductor device. By varying the magnetic field orientation, we reveal the existence of operation sweet spots where the impact of charge noise is minimized while preserving an efficient electric-dipole spin control. We correspondingly observe an extension of the Hahn-echo coherence time up to 88 $μ$s, exceeding by an order of magnitude the best reported values for hole-spin qubits, and approaching the state-of-the-art for electron spin qubits with synthetic spin-orbit coupling in isotopically-purified silicon. This finding largely enhances the prospects of silicon-based hole spin qubits for scalable quantum information processing.
