论文标题
SDEX：Monte Carlo模拟了Memristor横杆上随机微分方程的模拟
SDEX: Monte Carlo Simulation of Stochastic Differential Equations on Memristor Crossbars
论文作者
论文摘要
在这里，我们在备忘录横梁上介绍随机微分方程（SDE），其中高斯噪声的来源是从编程过程中设备中的离子漂移引起的随机电导得出的。我们检查了线阻力对正常随机向量产生的影响，表明偏斜和峰度在可接受的范围内。然后，我们显示了黑色 - choles SDE的随机微分方程求解器的实现，并将分布与分析解决方案进行比较。我们确定随机数的生成按预期工作，并计算模拟的能量成本。
Here we present stochastic differential equations (SDEs) on a memristor crossbar, where the source of gaussian noise is derived from the random conductance due to ion drift in the devices during programming. We examine the effects of line resistance on the generation of normal random vectors, showing the skew and kurtosis are within acceptable bounds. We then show the implementation of a stochastic differential equation solver for the Black-Scholes SDE, and compare the distribution with the analytic solution. We determine that the random number generation works as intended, and calculate the energy cost of the simulation.
