论文标题
压力诱导的伴随拓扑和金属 - 绝缘子量子相变为CE $ _3 $ PD $ _3 $ _4 $ _4 $
Pressure-induced concomitant topological and metal-insulator quantum phase transitions in Ce$_3$Pd$_3$Bi$_4$
论文作者
论文摘要
CE $ _3 $ PD $ _3 $ bi $ _4 $的电子特性和磁化率从18 K到290 K系统地研究了使用动态平均场理论，以及密度功能理论的动态平均场理论，以不同的细胞体积值。通过外推到零温度，CE $ _3 $ pd $ _3 $ _3 $ bi $ _4 $在环境压力下的基态状态由于杂交不足而被发现是相关的半学。施加压力后，在有限温度下观察到杂交强度的增加，并观察到与围质绝缘子的交叉。特征温度信号传达了Kondo Singlet的形成，以及与$ f $ - 电子定位 - 定位更改相关的特征温度，同时消失在0.992 $ v_0 $的临界体积左右，这表明这种金属制剂过渡可能与量子关键点相关。最后，威尔逊的循环计算表明，围绕近距离绝缘侧是拓扑的，因此在整个量子临界点上也发生了拓扑转换。
The electronic property and magnetic susceptibility of Ce$_3$Pd$_3$Bi$_4$ were systemically investigated from 18 K to 290 K for varying values of cell-volume using dynamic mean-field theory coupled with density functional theory. By extrapolating to zero temperature, the ground state of Ce$_3$Pd$_3$Bi$_4$ at ambient pressure is found to be a correlated semimetal due to insufficient hybridization. Upon applying pressure, the hybridization strength increases and a crossover to Kondo insulator is observed at finite temperatures. The characteristic temperature signaling the formation of Kondo singlet, as well as the characteristic temperature associated with $f$-electron delocalization-localization change, simultaneously vanishes around a critical volume of 0.992$V_0$, suggesting that such metal-insulator transition is possibly associated with a quantum critical point. Finally, the Wilson's loop calculations indicate that the Kondo insulating side is topologically trivial, thus a topological transition also occurs across the quantum critical point.
