论文标题
卤化诱导的超导体到 - 症状在MXENE的MOENE中具有直接带隙和长载体寿命的过渡
Halogenation induced transition of superconductor-to-semiconductor in MXene-like MOene with direct band gap and long carrier lifetime
论文作者
论文摘要
具有有趣的机械和电子特性的传统MXENE，以及元素组成和化学装饰的生育，引起了很多关注。但是，在报告的MXENES中，具有Direc带隙的半导体性状极为罕见。因此，将MXENE家族扩大到具有独特行为的碳化物和氮化物上仍然是一个非凡而有趣的领域。
Traditional MXenes with intriguing mechanical and electronic properties, together with the fertilities of elemental compositions and chemical decorations have aroused much attentions. However, the semiconducting traits with direc band gap are extremetely rare among reported MXenes. Thus, broadening the family of MXene beyond carbides and nitrides with unique behaviors is still an extraordinary and fascinating field.
