论文标题
2D Dirac-Source FET的设计注意事项：设备参数，非理想和基准测试
Design Considerations for 2D Dirac-Source FETs: Device Parameters, Non-Idealities and Benchmarking
论文作者
论文摘要
Dirac-Source场效应晶体管（DS-FET）已被提议作为低功率开关设备的有前途的候选者，它利用石墨烯的狄拉克锥作为低通势过滤器。特别是，对于最终缩放目的，使用二维（2D）材料作为DS-FET中的通道很感兴趣。在本文中，我们使用基于Landauer形式主义的弹道模拟研究了2D DS-FET的设计注意事项。我们研究了几个关键设备参数对设备性能的影响，例如石墨烯掺杂，肖特基屏障高度和2D通道的有效质量。此外，我们研究了非理想性对DS-FET的性能的影响，例如石墨烯障碍和振动化，以及减轻它们的方法。最后，我们对不同通道材料的DS-FET的性能进行基准测试，为2D DS-FET的正确选择提供了指南。
Dirac-source field-effect transistors (DS-FETs) have been proposed as promising candidates for low-power switching devices by leveraging the Dirac cone of graphene as a low-pass energy filter. In particular, using two-dimensional (2D) materials as the channel in a DS-FET is of interest for ultimate scaling purposes. In this paper, we investigate the design considerations for 2D DS-FETs using ballistic simulations based on Landauer formalism. We study the impact of several key device parameters on the device performance, such as graphene doping, Schottky barrier heights, and effective mass of the 2D channel. In addition, we study the impact of non-idealities on the performance of DS-FETs, such as graphene disorder and rethermalization, as well as ways to mitigate them. Finally, we benchmark the performance of DS-FETs for different channel materials, providing a guide for the proper choice of material for 2D DS-FETs.
