论文标题
低功率通过相互的铁磁性/拓扑绝缘子异质结构进行记忆计算中的低功率
Low power In Memory Computation with Reciprocal Ferromagnet/Topological Insulator Heterostructures
论文作者
论文摘要
3D拓扑绝缘子（3DTI）的表面状态是一种自旋螺旋锁定导电状态，其大型自旋霍尔角可用于上覆的旋转轨道扭矩的基于上覆的铁磁铁（FM）的开关。相反，单独的FM进出Ti表面平面的磁化磁化强度的封闭开关可以打开和关闭Ti表面电流。 Ti Dirac锥体间隙的门可调节性有助于减少其子阈值秋千。通过利用这种互惠行为，我们可以使用两个FM/3DTI异质结构来设计1个磁盘1磁性隧道连接随机访问记忆单元（1T1MTJ RAM）进行超低功率处理（PIM）体系结构。我们的计算涉及将Fokker-Planck方程与基于非平衡的绿色功能（NEGF）的传导电子流动和基于Landau-Lifshitz-Gilbert（LLG）的磁化动力学。我们的合并方法使我们能够将设备性能指标与潜在的材料参数联系起来，这可以指导提出的实验和制造工作。
The surface state of a 3D topological insulator (3DTI) is a spin-momentum locked conductive state, whose large spin hall angle can be used for the energy-efficient spin orbit torque based switching of an overlying ferromagnet (FM). Conversely, the gated switching of the magnetization of a separate FM in or out of the TI surface plane, can turn on and off the TI surface current. The gate tunability of the TI Dirac cone gap helps reduce its sub-threshold swing. By exploiting this reciprocal behaviour, we can use two FM/3DTI heterostructures to design a 1-Transistor 1-magnetic tunnel junction random access memory unit (1T1MTJ RAM) for an ultra low power Processing-in-Memory (PiM) architecture. Our calculation involves combining the Fokker-Planck equation with the Non-equilibrium Green Function (NEGF) based flow of conduction electrons and Landau-Lifshitz-Gilbert (LLG) based dynamics of magnetization. Our combined approach allows us to connect device performance metrics with underlying material parameters, which can guide proposed experimental and fabrication efforts.
