论文标题
被动CMOS带传感器的表征
Characterization of Passive CMOS Strip Sensors
论文作者
论文摘要
CMOS成像传感器技术的最新进展，例如在CMOS像素传感器中，证明CMOS过程的辐射耐受性足以应对在强子撞机实验中跟踪层所需的某些辐射水平。随着硅跟踪范围覆盖不断增加的区域，对于当前的硅传感器而言，具有成本效益的替代方案，并且需要更集成的设计。本文介绍了从被动P-CMOS过程中生成的硅剥离传感器的实验室测量获得的结果。带有90SR源的电特性和电荷收集测量值和带红外波长的激光器对传感器性能没有影响。
Recent advances in CMOS imaging sensor technology , e.g. in CMOS pixel sensors, have proven that the CMOS process is radiation tolerant enough to cope with certain radiation levels required for tracking layers in hadron collider experiments. With the ever-increasing area covered by silicon tracking detectors cost effective alternatives to the current silicon sensors and more integrated designs are desirable. This article describes results obtained from laboratory measurements of silicon strip sensors produced in a passive p-CMOS process. Electrical characterization and charge collection measurements with a 90Sr source and a laser with infrared wavelength showed no effect of the stitching process on the performance of the sensor.
