论文标题

通过离子交换反应对2D硼的电子拓扑过渡

Electronic topological transition of 2D boron by the ion exchange reaction

论文作者

Zhang, Xiaoni, Tsujikawa, Yuki, Tateishi, Ikuma, Niibe, Masahito, Wada, Tetsuya, Horio, Masafumi, Hikichi, Miwa, Ando, Yasunobu, Yubuta, Kunio, Kondo, Takahiro, Matsuda, Iwao

论文摘要

我们系统地研究了通过离子交换方法实现的化学环境的非肌形唯一环境的电子进化。电子结构的特征是拓扑$ z_2 $不变。 Spoctroscic实验和DFT计算揭示了一片氢化硼苯(Borophane)是Dirac节点环半含量($ Z_2 = -1 $),而YCRB $ _4 $的分层晶体是绝缘子($ Z_2 = 1 $)。结果表明,通过在非肌唯一唯一唯一的硼苯层上替换反原子的电子拓扑过渡。

We systematically investigated electronic evolutions of non-symmorphic borophene with chemical environments that were realized by the ion exchange method. Electronic structures can be characterized by the topological $Z_2$ invariant. Spectroscopic experiments and DFT calculations unveiled that a sheet of hydrogenated borophene (borophane) is the Dirac nodal loop semimetal ($Z_2=-1$), while a layered crystal of YCrB$_4$ is an insulator ($Z_2=1$). The results demonstrate the electronic topological transition by replacement of the counter atoms on the non-symmorphic borophene layer.

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