论文标题
未来量子厅阻力标准的铬型二氮醇tell
Chromium-Doped Bismuth Antimony Telluride for Future Quantum Hall Resistance Standards
论文作者
论文摘要
自2017年以来，外延石墨烯一直是美国国家抵抗标准的基本材料。电量计量学内部研究的未来途径是消除对强磁场的需求，就像目前表现出量子厅效应的设备一样。量子大厅的效应只是许多研究努力之一，这些研究围绕着近期的量子物理现象（如复合费米子，电荷密度波和拓扑特性）[1-2]。新材料（如磁掺杂的拓扑绝缘子（MTI））提供了对量子异常效应的访问，以其理想形式，它可能成为未来的电阻标准，只需要一个小的永久磁铁就可以激活量化的电阻值[3-5]。此外，这些设备可以在零场上运行以进行测量，从而使欧姆的传播更加经济和便携。在这里，我们介绍了H/E2量化CR掺杂（BIXSB1-X）2TE3高原的精确测量结果，并通过将它们与现代石墨烯的电阻标准进行比较，从而为它们提供上下文。最终，基于MTI的设备可以在具有磁场隔离的Josephson电压标准的单个系统中组合，以获得替代的量子电流标准。
Since 2017, epitaxial graphene has been the base material for the US national standard for resistance. A future avenue of research within electrical metrology is to remove the need for strong magnetic fields, as is currently the case for devices exhibiting the quantum Hall effect. The quantum Hall effect is just one of many research endeavours that revolve around recent quantum physical phenomena like composite fermions, charge density waves, and topological properties [1-2]. New materials, like magnetically doped topological insulators (MTIs), offer access to the quantum anomalous Hall effect, which in its ideal form, could become a future resistance standard needing only a small permanent magnet to activate a quantized resistance value [3-5]. Furthermore, these devices could operate at zero-field for measurements, making the dissemination of the ohm more economical and portable. Here we present results on precision measurements of the h/e2 quantized plateau of Cr-Doped (BixSb1-x)2Te3 and give them context by comparing them to modern graphene-based resistance standards. Ultimately, MTI-based devices could be combined in a single system with magnetic-field-averse Josephson voltage standards to obtain an alternative quantum current standard.
