论文标题
反铁磁性中的量子异常效应
Quantum Anomalous Hall Effect in Antiferromagnetism
论文作者
论文摘要
到目前为止，实验实现的量子异常大厅（QAH）绝缘子都表现出铁磁顺序，而QAH效应仅在非常低的温度下发生。另一方面，直到现在，抗铁磁（AFM）材料的QAH效应从未被报道。在这封信中，我们通过提出具有静态AFM订单的四波段晶格模型来意识到QAH效应，这表明可以在AFM材料中找到QAH效应。然后，作为原型，我们证明了单层CRO可以通过对称分析和第一原理电子结构计算来从AFM Weyl半学切换到AFM QAH绝缘子。我们的工作不仅提出了一种新方案，以搜索材料中的QAH绝缘子，而且还揭示了一种大大升高QAH阶段的临界温度的方法。
So far, experimentally realized quantum anomalous Hall (QAH) insulators all exhibit ferromagnetic order and the QAH effect only occurs at very low temperatures. On the other hand, up to now the QAH effect in antiferromagnetic (AFM) materials has never been reported. In this letter, we realize the QAH effect by proposing a four-band lattice model with static AFM order, which indicates that the QAH effect can be found in AFM materials. Then, as a prototype, we demonstrate that a monolayer CrO can be switched from an AFM Weyl semimetal to an AFM QAH insulator by applying strain, based on symmetry analysis and the first-principles electronic structure calculations. Our work not only proposes a new scenario to search for QAH insulators in materials, but also reveals a way to considerably increase the critical temperature of the QAH phase.
