论文标题

电阻开关技术的广泛动态范围读出系统

A Wide Dynamic Range Read-out System For Resistive Switching Technology

论文作者

Xie, Lijie, Shen, Jiawei, Mifsud, Andrea, Wang, Chaohan, Alshaya, Abdulaziz, Papavassiliou, Christos

论文摘要

由于Memristor在广泛的电阻范围内具有可控性,因此已成为数据存储和模拟计算的有前途的设备。一个主要的挑战是在广泛的动态范围内准确地测量了磁出现。在本文中,提出了一个具有反馈调整的新读出电路,以测量和数字化20NA和2MA之间的输入电流。输入电流的大小由5级对数电流到电压放大器估计,该放大器缩放线性类似物到数字转换器。这样,最不重要的位跟踪绝对输入幅度。该电路适用于读取单个Memristor电导,并且在模拟计算中也是可取的,在模拟计算中,读取精度特别至关重要。这些电路已经在双极cmos-DMOS(BCD)GEN2技术中实现。

The memristor, because of its controllability over a wide dynamic range of resistance, has emerged as a promising device for data storage and analog computation. A major challenge is the accurate measurement of memristance over a wide dynamic range. In this paper, a novel read-out circuit with feedback adjustment is proposed to measure and digitise input current in the range between 20nA and 2mA. The magnitude of the input currents is estimated by a 5-stage logarithmic current-to-voltage amplifier which scales a linear analog-to-digital converter. This way the least significant bit tracks the absolute input magnitude. This circuit is applicable to reading single memristor conductance, and is also preferable in analog computing where read-out accuracy is particularly critical. The circuits have been realized in Bipolar-CMOS-DMOS (BCD) Gen2 technology.

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