论文标题
使用旋转转移扭矩磁性隧道连接的智能材料含义用于逻辑计算
Smart Material Implication Using Spin-Transfer Torque Magnetic Tunnel Junctions for Logic-in-Memory Computing
论文作者
论文摘要
最近已经提出了基于非挥发性电阻内存设备的能源有效逻辑（LIM）体系结构的设计智能材料含义（简单）逻辑。简单的逻辑是通过将比较器添加到常规暗示方案中的。这允许执行初步读取操作，因此仅在实际需要的情况下进行设置操作。这项工作使用纳米级旋转转移磁力隧道连接（STT-MTJ）设备探索了简单的逻辑方案。通过改变负载电阻器和应用电压来实现读取和设置操作，同时还研究了温度对电路操作的影响，从而分析了基于STT-MTJ的简单体系结构的性能。获得的结果表明，错误率和能源消耗之间的现有权衡，可以通过正确设置负载电阻和施加电压的值有效地管理。此外，我们的分析证明，在比较器输入时通过与绝对温度（PTAT）参考电压成正比跟踪MTJ性能的温度依赖性有益于减轻温度变化下的可靠性降解。
Smart material implication (SIMPLY) logic has been recently proposed for the design of energy-efficient Logic-in-Memory (LIM) architectures based on non-volatile resistive memory devices. The SIMPLY logic is enabled by adding a comparator to the conventional IMPLY scheme. This allows performing a preliminary READ operation and hence the SET operation only in the case it is actually required. This work explores the SIMPLY logic scheme using nanoscale spin-transfer torque magnetic tunnel junction (STT-MTJ) devices. The performance of the STT-MTJ based SIMPLY architecture is analyzed by varying the load resistor and applied voltages to implement both READ and SET operations, while also investigating the effect of temperature on circuit operation. Obtained results show an existing tradeoff between error rate and energy consumption, which can be effectively managed by properly setting the values of load resistor and applied voltages. In addition, our analysis proves that tracking the temperature dependence of the MTJ properties through a proportional to absolute temperature (PTAT) reference voltage at the input of the comparator is beneficial to mitigate the reliability degradation under temperature variations.
