论文标题
单硫磺空缺的单层空缺特征$ \ text {mos} _2 $
Spin-defect characteristics of single sulfur vacancies in monolayer $\text{MoS}_2$
论文作者
论文摘要
2D过渡金属二盐元中的单个自旋缺陷是用于量子应用的天然自旋 - 光子界面。在这里，我们报告了He-ion诱导的单层硫磺空位$ \ text {MOS} _2 $的三个发射线（Q1，Q2和Q*）的高场磁发光光谱。分析不对称PL线形与Q1和Q2的Dimagnetic Shift结合使用，可产生局部发射器的一致图像，波函数范围为$ \ sim $ 3.5 nm。独特的山谷 - 泽曼在平面外$ b $ fields中分裂，并通过面内$ b $ fields对黑暗状态进行亮度，因此需要对缺陷状态进行自旋 - valley的选择性，并在零领域提高了自旋排放。将我们的结果与AB-Initio计算进行比较，确定了Q1和Q2的性质，并表明Q*是化学功能化缺陷的发射。圆极化的光学程度的分析表明，费米水平是一个使发射极可调性的参数。这些结果表明，2D半导体中的缺陷可能用于量子技术。
Single spin defects in 2D transition-metal dichalcogenides are natural spin-photon interfaces for quantum applications. Here we report high-field magneto-photoluminescence spectroscopy from three emission lines (Q1, Q2 and Q*) of He-ion induced sulfur vacancies in monolayer $\text{MoS}_2$. Analysis of the asymmetric PL lineshapes in combination with the diamagnetic shift of Q1 and Q2 yields a consistent picture of localized emitters with a wavefunction extent of $\sim$ 3.5 nm. The distinct valley-Zeeman splitting in out-of-plane $B$-fields and the brightening of dark states through in-plane $B$-fields necessitates spin-valley selectivity of the defect states and lifted spin-degeneracy at zero field. Comparing our results to ab-initio calculations identifies the nature of Q1 and Q2 and suggests that Q* is the emission from a chemically functionalized defect. Analysis of the optical degree of circular polarization reveals that the Fermi level is a parameter that enables the tunability of the emitter. These results show that defects in 2D semiconductors may be utilized for quantum technologies.
