论文标题
透视图：反植物氧化物的分子束外延
Perspective: Molecular beam epitaxy of antiperovskite oxides
论文作者
论文摘要
反植物或反钙钛矿最近已成为具有众多有希望的电子特性的材料类别。该观点描述了氧化物Antiperovskites sr $ _3 $ pbo和sr $ _3 $ sno的分子束外延（MBE）生长。 We show that MBE offers great potential not only in growing antiperovskites with high structural quality, but also in providing a means to seamlessly connect with advanced characterization tools, including x-ray photoelectron spectroscopy (XPS), low-energy electron diffraction (LEED), reflection high-energy electron diffraction (RHEED), and scanning tunneling microscopy (STM), to facilitate the analyses of它们的内在特性。最初的结果表明，原子控制的反蛋糕生长的可行性，这可以打开门以研究电子环境中与常规复杂氧化物中可用的电子环境中的拓扑和相关电子状态。
Antiperovskites, or inverse perovskites, have recently emerged as a material class with a plethora of promising electronic properties. This perspective describes the molecular beam epitaxy (MBE) growth of oxide antiperovskites Sr$_3$PbO and Sr$_3$SnO. We show that MBE offers great potential not only in growing antiperovskites with high structural quality, but also in providing a means to seamlessly connect with advanced characterization tools, including x-ray photoelectron spectroscopy (XPS), low-energy electron diffraction (LEED), reflection high-energy electron diffraction (RHEED), and scanning tunneling microscopy (STM), to facilitate the analyses of their intrinsic properties. The initial results point toward the feasibility of atomically controlled antiperovskite growth, which could open doors to study topological and correlated electronic states in an electronic environment quite distinct from what is available in conventional complex oxides.
