论文标题
拓扑半学的疾病，活动能力和磁势之间的直接联系
Direct link between disorder, mobility and magnetoresistance in topological semimetals
论文作者
论文摘要
疾病影响拓扑半学性质的程度仍然是一个悬而未决的问题，并且与对拓扑状态的理解和在实际应用中使用拓扑材料的使用相关。在这里，我们在典型的狄拉克半学CD $ _3 $ AS $ _2 $中实现了对点缺陷浓度的无与伦比的系统控制，以获得对障碍在电子传输行为中的作用的重要洞察力。我们发现，砷空位会引入费米水平附近的局部状态，并强烈影响电子迁移率。通过更改沉积过程中使用的AS/CD通量比来减少砷空缺，从而使磁磁性从200％-1000％和移动性从5000-18,000 cm $^2 $/vs增加。但是，以前与疾病有关的线性磁阻的程度与疾病的测量相关，包括障碍潜力和无序相关长度。这一发现产生了重要的新信息，以识别更广泛材料范围的线性磁倍率的起源。
The extent to which disorder influences the properties of topological semimetals remains an open question and is relevant to both the understanding of topological states and the use of topological materials in practical applications. Here, we achieve unmatched and systematic control of point defect concentrations in the prototypical Dirac semimetal Cd$_3$As$_2$ to gain important insight into the role of disorder on electron transport behavior. We find that arsenic vacancies introduce localized states near the Fermi level and strongly influence the electron mobility. Reducing arsenic vacancies by changing the As/Cd flux ratio used during deposition results in an increase in the magnetoresistance from 200%-1000% and an increase in mobility from 5000-18,000 cm$^2$/Vs. However, the degree of linear magnetoresistance, which has previously been linked to disorder, is found here to correlate inversely with measures of disorder, including disorder potential and disorder correlation lengths. This finding yields important new information in the quest to identify the origin of linear magnetoresistance in a wider range of materials.
