论文标题
MOS $ _2 $晶体管的移动性高估是由于侵入性电压探头
Mobility overestimation in MoS$_2$ transistors due to invasive voltage probes
论文作者
论文摘要
高度追捧二维（2D）半导体的载流子的迁移率。最近，NG。等。 [1]报道了在氮化硅（SIN $ _X $）底物上的波纹钼二硫化物（MOS $ _2 $）晶体管，这些基材显示出高度电子迁移率高达〜900 cm $^2 $^2 $ v $^{ - 1} $ s $ s $ s $^{ - 1} $。高迁移率值归因于波纹MOS $ _2 $通道中的晶格失真抑制了电子 - 光散射。尽管结果令人信服，但这很重要，表明参考文献中的移动性值。 [1]由于四探针测量设置中的侵入性电压探头可能会被高估，这会导致电压探针附近的正阈值电压移动以及对明显场效应迁移率的人为高估。
Improving carrier mobilities of two-dimensional (2D) semiconductors is highly sought after. Recently, Ng. et al. [1] reported rippled molybdenum disulfide (MoS$_2$) transistors on bulged silicon nitride (SiN$_x$) substrates that exhibit high electron mobilities up to ~900 cm$^2$V$^{-1}$s$^{-1}$. The high mobility values were attributed to the suppression of electron-phonon scattering by the lattice distortion in the rippled MoS$_2$ channel. While the results are compelling, this Matters Arising shows that the mobility values in ref. [1] are likely to be overestimated due to invasive voltage probes in the four-probe measurement setup, which causes a positive threshold voltage shift near the voltage probes and an artificial overestimation of apparent field-effect mobility.
