论文标题
原子上薄的金属Si和Ge同素体具有较高的费米速度
Atomically-thin metallic Si and Ge allotropes with high Fermi velocities
论文作者
论文摘要
硅和锗是用于制造集成电路的电子设备的著名材料，但由于其半导体性质，它们本身并不被认为是互连设备的有希望的选择。我们已经发现，Si和GE原子都可以形成意外的金属单层结构，这些结构比经过广泛研究的半金属硅和德国烯更稳定。更重要的是，新发现的Si和GE的二维同素异素型具有优于石墨烯中的Dirac Fermions的速度，这表明基于硅的集成电路所需的金属电线可以由Si原子本身制成，而无需不相容，可以使所有基于基于硅的集成电路都可以制成。
Silicon and germanium are the well-known materials used to manufacture electronic devices for the integrated circuits but they themselves are not considered as promising options for interconnecting the devices due to their semiconducting nature. We have discovered that both Si and Ge atoms can form unexpected metallic monolayer structures which are more stable than the extensively studied semimetallic silicene and germanene, respectively. More importantly, the newly discovered two-dimensional allotropes of Si and Ge have Fermi velocities superior to the Dirac fermions in graphene, indicating that the metal wires needed in the silicon-based integrated circuits can be made of Si atom itself without incompatibility, allowing for all-silicon-based integrated circuits.
