论文标题
定期间隔的CAF $ _2 $ SI（100）表面的半绝素细丝带生长研究
Periodically Spaced CaF$_2$ Semi-Insulating Thin Ribbons Growth Study on the Si(100) Surface
论文作者
论文摘要
在过去几十年中，对金属和半导体表面上半胰岛的使用和研究发现了不断的兴趣。到目前为止，对基材上绝缘岛的尺寸和生长位置的控制是不确定的，或者通常限制在使用蒸发口罩的情况下，这些面膜的大小很容易超过十分之一的纳米。在这里，我们表明，可以在裸露的Si（100）表面上生长自组织的周期性间隔的半胰岛条纹丝带。这些结构的外延生长是通过在硅表面上的Caf $ _2 $分子蒸发而获得的，覆盖率为1.2单层。通过在低温（9K）下扫描隧道技术进行研究。所获得的丝带表现出〜3.2 eV的表面带隙以及丝带中央部分的共振状态，低于费米水平的能量，含量为〜2.0 eV。密度功能理论的使用允许提出观察到的丝带的模型结构并重现实验性STM地形。讨论了细丝的形成，我们指出了可能影响其周期性的结构内部和结构之间的机械力的影响。
The use and the study of semi-insulating layers on metals and semiconductors surfaces have found continuous interest in the past decades. So far, the control of the sizes and growth location of the insulating islands on the substrate is either ill-defined or usually constrained to the use of evaporation masks which size can easily exceed tenth of nanometers. Here, we show that it is possible to grow self-organized periodically spaced thin ribbons of semi-insulating stripes on the bare Si(100) surface. The epitaxial growth of these structures is obtained by the evaporation of CaF$_2$ molecules on the silicon surface with a coverage of 1.2 monolayers. They are investigated via scanning tunneling techniques at low temperature (9K). The obtained ribbons exhibit a surface bandgap of ~3.2 eV as well as a resonant state at the central part of the ribbons at ~2.0 eV below the Fermi level energy. The use of the density functional theory allows suggesting a model structure of the observed ribbons and reproducing the experimental STM topographies. The formation of the thin ribbons is discussed and we point out the influence of the mechanical forces inside and between the structures that may influence their periodicity.
