论文标题
2D半导体中黑暗和局部激子之间杂交的应变控制
Strain control of hybridization between dark and localized excitons in a 2D semiconductor
论文作者
论文摘要
机械应变是一种强大的调谐旋钮,用于激发量,库仑结合的电子孔复合物主导了二维半导体的光学特性。虽然广泛理解了明亮的自由激子的应变响应,但黑暗的无抗激子的行为(通常由于旋转和动量保存而导致的长期激发)或与缺陷有关的局部激子的行为主要未探索。在这里,我们开发了一种能够过滤原始悬浮的WSE2的技术,以保持高达3 \%的低温温度,以研究这些脆弱的多体状态的应变行为。我们发现,在单层WSE2中的应变,黑暗和局部激子的应用下 - 原型2D半导体 - 将其带入能量共振中,形成了一种新的混合状态,该状态遗传了构成物种的性质。杂交状态的特征,包括增强的光/物质耦合,避免交叉的能量转移以及多体相互作用的应变可调节性,都得到了第一原理计算的支持。此处报道的杂交激子可能在基于WSE2的单个量子发射器的操作中起关键作用。此外,我们开发的技术可用于指纹未识别的激子状态
Mechanical strain is a powerful tuning knob for excitons, Coulomb-bound electron-hole complexes dominating optical properties of two-dimensional semiconductors. While the strain response of bright free excitons is broadly understood, the behavior of dark free excitons (long-lived excitations that generally do not couple to light due to spin and momentum conservation) or localized excitons related to defects remains mostly unexplored. Here, we develop a technique capable of straining pristine suspended WSe2 kept at cryogenic temperatures up to 3\% to study the strain behavior of these fragile many-body states. We find that under the application of strain, dark and localized excitons in monolayer WSe2 - a prototypical 2D semiconductor - are brought into energetic resonance, forming a new hybrid state that inherits the properties of the constituent species. The characteristics of the hybridized state, including an order-of-magnitude enhanced light/matter coupling, avoided-crossing energy shifts, and strain tunability of many-body interactions, are all supported by first-principles calculations. The hybridized exciton reported here may play a critical role in the operation of single quantum emitters based on WSe2. Furthermore, the techniques we developed may be used to fingerprint unidentified excitonic states