论文标题

自我管理的DRAM:一个低成本框架,用于实现自动和高效的DRAM操作

Self-Managing DRAM: A Low-Cost Framework for Enabling Autonomous and Efficient in-DRAM Operations

论文作者

Hassan, Hasan, Olgun, Ataberk, Yaglikci, A. Giray, Luo, Haocong, Mutlu, Onur

论文摘要

内存控制器负责管理DRAM维护操作(例如刷新,Rowhammer保护,内存擦洗),以可靠地操作现代DRAM芯片。实施新的维护操作通常需要在DRAM接口,内存控制器和潜在的其他系统组件中进行修改。这种修改只有通过新的DRAM标准才能进行,这可能需要很长时间才能开发,这可能会导致采用DRAM芯片的新建筑技术的进展缓慢。 我们提出了一种新的低成本DRAM体系结构,即自我管理DRAM(SMD),该体系结构可以通过将控制维护操作从内存控制器转移到SMD芯片的责任来实现自主的DRAM维护操作。为了启用自主维护操作,我们对DRAM接口进行了一次修改,以便SMD芯片拒绝内存控制器访问DRAM区域的维护区域,同时允许内存访问其他人。因此,SMD启用1)在不进一步更改DRAM接口或其他系统组件的情况下,实施新的DRAM内部维护机制(或修改现有的机制),以及2)与一个DRAM区域中维护操作的延迟与另一个DRAM的潜伏期重叠。 我们评估了SMD并表明它可以实现,而无需在DDRX界面中添加新的别针,而延迟较低和面积高架,2)在20个基于DDR4的系统/DRAM CO-DESIGN的20个四核存储器密集型工作负载中达到4.1%的平均速度,该技术可以智能地与记忆访问相似,并拒绝与内存的访问相关,并拒绝进行记忆的进度,并依次与内存相似。我们相信并希望SMD可以使DRAM架构的创新能够迅速实现。我们在https://github.com/cmu-safari/selfmanagingdram上开放所有SMD源代码和数据。

The memory controller is in charge of managing DRAM maintenance operations (e.g., refresh, RowHammer protection, memory scrubbing) to reliably operate modern DRAM chips. Implementing new maintenance operations often necessitates modifications in the DRAM interface, memory controller, and potentially other system components. Such modifications are only possible with a new DRAM standard, which takes a long time to develop, likely leading to slow progress in the adoption of new architectural techniques in DRAM chips. We propose a new low-cost DRAM architecture, Self-Managing DRAM (SMD), that enables autonomous in-DRAM maintenance operations by transferring the responsibility for controlling maintenance operations from the memory controller to the SMD chip. To enable autonomous maintenance operations, we make a single modification to the DRAM interface, such that an SMD chip rejects memory controller accesses to DRAM regions under maintenance, while allowing memory accesses to others. Thus, SMD enables 1) implementing new in-DRAM maintenance mechanisms (or modifying existing ones) with no further changes in the DRAM interface or other system components, and 2) overlapping the latency of a maintenance operation in one DRAM region with the latency of accessing data in another. We evaluate SMD and show that it 1) can be implemented without adding new pins to the DDRx interface with low latency and area overhead, 2) achieves 4.1% average speedup across 20 four-core memory-intensive workloads over a DDR4-based system/DRAM co-design technique that intelligently parallelizes maintenance operations with memory accesses, and 3) guarantees forward progress for rejected memory accesses. We believe and hope SMD can enable innovations in DRAM architecture to rapidly come to fruition. We open source all SMD source code and data at https://github.com/CMU-SAFARI/SelfManagingDRAM.

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