论文标题
观察Aharonov-Bohm托面电路中安德森过渡的逆向
Observation of inverse Anderson transitions in Aharonov-Bohm topolectrical circuits
论文作者
论文摘要
众所周知，安德森（Anderson）的过渡是一种疾病引起的金属 - 绝缘子过渡。对这种传统智慧的敬意，一些调查表明，疾病可以破坏平板中局部模式的相位相干性，从而使局部状态融化为扩展状态。这种现象称为逆安德森过渡。迄今为止，仍然缺乏对安德森过渡的实验性观察。在这项工作中，我们报告了基于Aharonov-bohm topolectrical Circuits的反向安德森过渡的实施。不同类型的疾病，包括对称性相关的，反对称的疾病和不相关的疾病，可以在Aharonov-bohm电路中轻松实施地面设置的空间分布。通过直接测量频率依赖性阻抗反应和时间域电压动力学，明确观察到了由反对称性相关疾病引起的逆安德森过渡。此外，在干净的Aharonov-Bohm电路或Aharonov-Bohm电路中，平面频段和相关的空间位置分别可以分别维持对称性和无关疾病。我们的建议提供了一个灵活的平台来研究几何定位与安德森本地化之间的相互作用，并且可能在电子信号控制中具有潜在的应用。
It is well known that Anderson transition is a disorder-induced metal-insulator transition.Contrary to this conventional wisdom, some investigations have shown that disorders could destroy the phase coherence of localized modes in flatbands, making the localized states melt into extended states. This phenomenon is called the inverse Anderson transition. While, to date, the experimental observation of inverse Anderson transitions is still lacking. In this work, we report the implementation of inverse Anderson transitions based on Aharonov-Bohm topolectrical circuits. Different types of disorders, including symmetric-correlated, antisymmetric-correlated and uncorrelated disorders, can be easily implemented in Aharonov-Bohm circuits by engineering the spatial distribution of ground settings. Through the direct measurements of frequency-dependent impedance responses and time-domain voltage dynamics, the inverse Anderson transitions induced by antisymmetric-correlated disorders are clearly observed. Moreover, the flat bands and associated spatial localizations are also fulfilled in clean Aharonov-Bohm circuits or Aharonov-Bohm circuits sustaining symmetric-correlated and uncorrelated disorders, respectively. Our proposal provides a flexible platform to investigate the interplay between the geometric localization and Anderson localization, and could have potential applications in electronic signal control.
