论文标题

持续记忆正确条件的调查

Survey of Persistent Memory Correctness Conditions

论文作者

Ben-David, Naama, Friedman, Michal, Wei, Yuanhao

论文摘要

近年来,由于引入了非易失性随机访问记忆(NVRAM),对并发持续计划的研究激增,产生了许多难以比较的模型和正确性概念。在本文中,我们调查了此设置的现有正确性属性,将它们置于相同的上下文中并进行比较。我们基于它们认为正确的历史的一般性,介绍了这些持久性属性的层次结构,并显示了该层次结构如何基于不同的模型假设的变化。

The study of concurrent persistent programs has seen a surge of activity in recent years due to the introduction of non-volatile random access memories (NVRAM), yielding many models and correctness notions that are difficult to compare. In this paper, we survey existing correctness properties for this setting, placing them into the same context and comparing them. We present a hierarchy of these persistence properties based on the generality of the histories they deem correct, and show how this hierarchy shifts based on different model assumptions.

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