论文标题
Vlasov模拟具有能量依赖的二次发射系数的发射等离子体鞘,并改善了介电充电效应的建模
Vlasov Simulation of Emissive Plasma Sheath with Energy-Dependent Secondary Emission Coefficient and Improved Modeling for Dielectric Charging Effects
论文作者
论文摘要
考虑到电子诱导的二级电子发射(请参阅)和反向散射,采用了一维Vlasov Poisson仿真代码来研究血浆鞘。在一系列血浆模拟中,SEE系数通常被视为常数,在此改进,请参见带电介电壁的模型,其中包括对SEE系数的墙壁充电效应和SEE SEE系数的能量依赖性。在上面实现的相关算法详细研究了等离子体模拟中的模型。发现SEE系数随着负壁电荷的量增加而增加,这又降低了发射鞘的电势。凭借能量依赖性参见系数,与经典发射鞘理论预测的线性关系相反,鞘电位是血浆电子温度的非线性功能。结合墙壁充电效果的模拟和参见系数的能量依赖性表明,带电的空间有限鞘形成在高血浆电子温度水平上,鞘电位和表面充电均饱和。此外,测试并比较了动力学模拟中实现反向散射的不同算法。通过有效的后散射电子转换为辅助电子,请参见系数几乎不会影响鞘层的性质。模拟结果显示与升级的鞘理论预测相称。
A one dimensional Vlasov Poisson simulation code is employed to investigate the plasma sheath considering electron induced secondary electron emission (SEE) and backscattering. The SEE coefficient is commonly treated as constant in a range of plasma simulations, here improved SEE model of a charged dielectric wall is constructed which includes the wall charging effect on SEE coefficient and the energy dependency of SEE coefficient. Pertinent algorithms to implement above SEE model in plasma simulation are studied in detail. It is found that the SEE coefficient increases with the amount of negative wall charges, which in turn reduces the emissive sheath potential. With energy dependent SEE coefficient, the sheath potential is a nonlinear function of the plasma electron temperature, as opposed to the linear relation predicted by classic emissive sheath theory. Simulation combining both wall charging effect and SEE coefficient energy dependency suggests that the space charged limited sheath is formed at high plasma electron temperature levels, where both sheath potential and surface charging saturate. Additionally, different algorithms to implement the backscattering in kinetic simulation are tested and compared. Converting backscattered electron to secondary electron via an effective SEE coefficient barely affects the sheath properties. The simulation results are shown to be commensurate with the upgraded sheath theory predictions.