论文标题
在PT Ultrathin Films中调谐磁滞循环，以通过电解质门控为$ \ rm {COFE_2O_4} $
Tuning the hysteresis loop for the anomalous Hall effect in Pt ultrathin films on $\rm{CoFe_2O_4}$ by electrolyte gating
论文作者
论文摘要
铁磁绝缘子上的PT超薄膜已被广泛研究用于旋转的应用，并且由于磁接近效应（MPE），界面PT原子的磁矩被认为是铁磁性的。通常使用异常的大厅效应（AHE）检查PT层的平面磁矩。为了调整PT Ultrathin膜的铁磁特性，我们在PT薄膜上制造了电式双层晶体管，厚度为5.9 nm，在$ \ rm {COFE_2O_4} $（CFO）Ferrimagnetic Insululator上厚度为5.9 nm和7.0 nm。对于PT（7.0 nm）/CFO样品，在没有栅极偏置的异常大厅电阻率中观察到磁滞回路，并通过施加栅极偏置来调整强制场。对于PT（5.9 nm）/CFO样本，没有门偏置观察到磁滞回路，而是通过应用门偏置（$ v \ rm {_g} = $ $ \ $ \ pm $ 3 V）打开。这表明PT膜中磁矩的远程铁磁有序通过电场效应打开和关闭。观察到+3 V的$ v \ rm {_g} $的磁滞回路最高为19.5 k，而观察到AHE的最高为室温。
Pt ultrathin films on ferromagnetic insulators have been widely studied for spintronics applications, and magnetic moments of interface Pt atoms were considered to be ferromagnetically ordered due to a magnetic proximity effect (MPE). An anomalous Hall effect (AHE) is usually used to examine an out-of-plane magnetic moments of the Pt layer. To tune ferromagnetic properties of an Pt ultrathin film, we fabricated electric double layer transistors on Pt thin films with thicknesses of 5.9 nm and 7.0 nm on a $\rm{CoFe_2O_4}$ (CFO) ferrimagnetic insulator. For the Pt (7.0 nm)/CFO sample, a hysteresis loop was observed in the anomalous Hall resistivity without the gate bias, and the coercive field was tuned by applying the gate bias. For the Pt (5.9 nm)/CFO sample, a hysteresis loop was not observed without a gate bias, but was opened by applying a gate bias ($V\rm{_G} =$ $\pm$3 V). This indicated that the long-range ferromagnetic ordering of magnetic moments in the Pt film was switched on and off by the electric field effect. The hysteresis loop was observed up to 19.5 K for a $V\rm{_G}$ of +3 V, while the AHE was observed up to approximately room temperature.
