论文标题
部分可观测时空混沌系统的无模型预测
Direct evidence of a charge depletion region at the interface of Van der Waals monolayers and dielectric oxides: The case of superconducting FeSe/STO
论文作者
论文摘要
二维Van der Waals材料的发现开辟了一些设计新型设备的可能性。然而,设计具有改善物理特性的外来异形杂质的一种更有希望的方法是将这些材料的单层生长在基板上。例如,在超导性领域,已经证明,在某些氧化物底物上生长的FESE单层的超导过渡温度,例如,钛酸腹膜(STO)远高于其整体对应物。尽管该系统被认为是理解高温超导性现象的模型系统,但负责这种高过渡温度的物理机制仍在高度争议中。在此使用动量和能量解析的高分辨率电子损坏光谱学探测FESE/STO(001)系统的动态电荷响应,并证明频率和动量依赖性的动态电荷响应与简单的膜/底物模型不兼容。我们的分析揭示了该范德华单层和底物之间界面上的耗竭区域的存在。耗尽层的存在,伴随着从STO到FESE单层的电荷转移相当大,导致STO能带的强烈重新归一化,并且在界面处有很大的带弯曲。我们的结果阐明了FESE/氧化物界面的电子复杂性,并通过界面工程铺平了设计新型低维高度超导体的方式。我们预计观察到的现象是相当笼统的,并且可以在与介电氧化物或半导体底物接触的许多二维范德华单层中发生。
The discovery of two dimensional Van der Waals materials has opened up several possibilities for designing novel devices. Yet a more promising way of designing exotic heterostutures with improved physical properties is to grow a monolayer of these materials on a substrate. For example, in the field of superconductivity it has been demonstrated that the superconducting transition temperature of a monolayer of FeSe grown on some oxide substrates e.g., strontium titanate (STO) is by far higher than its bulk counterpart. Although the system has been considered as a model system for understanding the phenomenon of high-temperature superconductivity, the physical mechanism responsible for this high transition temperature is still highly under debate. Here using momentum and energy resolved high-resolution electron energy-loss spectroscopy we probe the dynamic charge response of the FeSe/STO(001) system and demonstrate that the frequency- and momentum-dependent dynamic charge response is not compatible with a simple film/substrate model. Our analysis reveals the existence of a depletion region at the interface between this Van der Waals monolayer and the substrate. The presence of the depletion layer, accompanied with a considerably large charge transfer from STO into the FeSe monolayer, leads to a strong renormalization of the STO energy bands and a substantial band bending at the interface. Our results shed light on the electronic complexities of the FeSe/oxide interfaces and pave the way of designing novel low-dimensional high-temperature superconductors through interface engineering. We anticipate that the observed phenomenon is rather general and can take place in many two dimensional Van der Waals monolayers brought in contact with dielectric oxides or semiconducting substrates.