论文标题
部分可观测时空混沌系统的无模型预测
The POLARBEAR-2 and Simons Array Focal Plane Fabrication Status
论文作者
论文摘要
储层计算是预测湍流的有力工具,其简单的架构具有处理大型系统的计算效率。然而,其实现通常需要完整的状态向量测量和系统非线性知识。我们使用非线性投影函数将系统测量扩展到高维空间,然后将其输入到储层中以获得预测。我们展示了这种储层计算网络在时空混沌系统上的应用,该系统模拟了湍流的若干特征。我们表明,使用径向基函数作为非线性投影器,即使只有部分观测并且不知道控制方程,也能稳健地捕捉复杂的系统非线性。最后,我们表明,当测量稀疏、不完整且带有噪声,甚至控制方程变得不准确时,我们的网络仍然可以产生相当准确的预测,从而为实际湍流系统的无模型预测铺平了道路。
We present on the status of POLARBEAR-2 A (PB2-A) focal plane fabrication. The PB2-A is the first of three telescopes in the Simon Array (SA), which is an array of three cosmic microwave background (CMB) polarization sensitive telescopes located at the POLARBEAR (PB) site in Northern Chile. As the successor to the PB experiment, each telescope and receiver combination is named as PB2-A, PB2-B, and PB2-C. PB2-A and -B will have nearly identical receivers operating at 90 and 150 GHz while PB2-C will house a receiver operating at 220 and 270 GHz. Each receiver contains a focal plane consisting of seven close-hex packed lenslet coupled sinuous antenna transition edge sensor bolometer arrays. Each array contains 271 di-chroic optical pixels each of which have four TES bolometers for a total of 7588 detectors per receiver. We have produced a set of two types of candidate arrays for PB2-A. The first we call Version 11 (V11) and uses a silicon oxide (SiOx) for the transmission lines and cross-over process for orthogonal polarizations. The second we call Version 13 (V13) and uses silicon nitride (SiNx) for the transmission lines and cross-under process for orthogonal polarizations. We have produced enough of each type of array to fully populate the focal plane of the PB2-A receiver. The average wirebond yield for V11 and V13 arrays is 93.2% and 95.6% respectively. The V11 arrays had a superconducting transition temperature (Tc) of 452 +/- 15 mK, a normal resistance (Rn) of 1.25 +/- 0.20 Ohms, and saturations powers of 5.2 +/- 1.0 pW and 13 +/- 1.2 pW for the 90 and 150 GHz bands respectively. The V13 arrays had a superconducting transition temperature (Tc) of 456 +/-6 mK, a normal resistance (Rn) of 1.1 +/- 0.2 Ohms, and saturations powers of 10.8 +/- 1.8 pW and 22.9 +/- 2.6 pW for the 90 and 150 GHz bands respectively.