论文标题
基于辐照的薄拓扑绝缘子的边缘模式的光诱导开关
Light-induced switch based on edge modes in irradiated thin topological insulators
论文作者
论文摘要
我们通过高频光辐照的薄拓扑绝缘子的纳米 - 纤维来研究运输性能，这些圆周光线具有圆形极化。通过使用高频制度，可以保证通过纳米 - 丝带进行连贯的和量化的传输，然后适用LANADAUER形式主义。已经证明，带隙内的伪旋转边缘模式可以通过这种纳米结构进行传输，它们在顶部和底部边缘的定位在很大程度上取决于光偏振。即使我们应用源批次偏置，这些边缘模式仍然存在。基于此电流的这种边缘选择性，可以设计一个光诱导的开关，其电流的适当/OFF比率由两个具有相反光极化的散射区组成。每个键上的本地电流显示电流如何穿过边缘并跳入相反的边缘。此外，提出了其他一些纳米杂题作为电子开关，这些开关是根据散射区域的质量术语工程设计的，该纳米界面是通过磁掺杂引起的垂直磁化以及在散射区域上应用的结构反转不对称的。
We investigate transport properties through nano-ribbons of thin topological insulators irradiated by high frequency light with circular polarization. By using high frequency regime, a coherent and quantized transport through the nano-ribbon is guaranteed and then Lanadauer formalism is applicable. It is demonstrated that the pseudo-spin edge modes inside the band gap can host transmission through this nano-junction which their localization on the top and bottom edges depend strongly on the light polarization. These edge modes persist even if we apply a source-drain bias. Based on this edge selectivity for the current, one can design a light-induced switch with an appropriate on/off ratio of the current which is composed of two scattering regions with opposite light polarization. The local current on each bond shows how the current is passing through the edges and jumps into the opposite edge. Furthermore, some other nano-junctions are proposed as electronic switches which are designed based on the mass term engineering of the scattering region by means of perpendicular magnetization induced by magnetic doping and also structure inversion asymmetry applied on the scattering region.
