论文标题
在电信波长范围内具有血浆频率的重掺杂锌
Heavily doped zinc oxide with plasma frequencies in the telecommunication wavelength range
论文作者
论文摘要
我们通过使用聚焦离子束（FIB）系统和植入后激光退火来证明ZnO的重浓度和过度掺杂。离子植入允许掺入具有几乎任意浓度的杂质，而激光耗电过程可以使ZnO中GA的固定性极限靠近或超过二体激活。我们实现了浓度浓度的ZnO：GA，自由载体浓度〜10^21 cm^（-3），导致等离子体波长为1.02 um，比电信波长为1.55 um，其短得多。因此，我们的方法可以控制ZnO的等离子体频率从远端降低到1.02 UM，从而为在此制度中的应用提供了有希望的等离子材料。
We demonstrate heavy and hyper doping of ZnO by a combination of gallium (Ga) ion implantation using a focused ion beam (FIB) system and post-implantation laser annealing. Ion implantation allows for the incorporation of impurities with nearly arbitrary concentrations, and the laser-annealing process enables dopant activation close to or beyond the solid-solubility limit of Ga in ZnO. We achieved heavily doped ZnO:Ga with free-carrier concentrations of ~10^21 cm^(-3), resulting in a plasma wavelength of 1.02 um, which is substantially shorter than the telecommunication wavelength of 1.55 um. Thus, our approach enables the control of the plasma frequency of ZnO from the far infrared down to 1.02 um, providing a promising plasmonic material for applications in this regime.
