论文标题
Beta-GA2O3 MOSFET，近50 GHz FMAX和5.4 mV/cm平均分解场
Beta-Ga2O3 MOSFETs with near 50 GHz fMAX and 5.4 MV/cm average breakdown field
论文作者
论文摘要
该信报告高性能$ \MATHRMβGA2O3薄通道MOSFET，带有T-gate，并由MOCVD重新生成T-gate和Demarteed掺杂的源/排水接触。栅极长度缩放（LG = 160-200 nm）导致峰值漏极电流（ID，最大）为285 mA/mm，在10 V漏极偏置下，电阻为23.5 ohm mm，在10 V漏极偏置下为52 ms/mm的峰值反式传导（GM）。从TLM测量中提取了0.078欧姆MM的低金属/N+接触电阻。罗恩（Ron）由通道和再生层之间的界面电阻支配。测量了lgd = 355 nm的192 V的闸门击穿电压，导致平均分解场（E_AVG）为5.4 mV/cm。该E_AVG是所有子微米栅极长度侧向FET中报告的最高报告。 200 nm硝化硅（SI3N4）钝化装置的RF测量值显示，当前增益频率（F_T）为11 GHz，并记录了48 GHz的功率增益频率（F_MAX）。 F_T.V_BR产品为192 V故障电压的2.11 thz.v。功绩的开关图超过了硅的开关图，并且与成熟的宽带间隙设备相当。
This letter reports high-performance $\mathrmβ Ga2O3 thin channel MOSFETs with T-gate and degenerately doped source/drain contacts regrown by MOCVD. Gate length scaling (LG= 160-200 nm) leads to a peak drain current (ID,MAX) of 285 mA/mm and peak trans-conductance (gm) of 52 mS/mm at 10 V drain bias with 23.5 Ohm mm on resistance (Ron). A low metal/n+ contact resistance of 0.078 Ohm mm was extracted from TLM measurement. Ron is dominated by interface resistance between channel and regrown layer. A gate-to-drain breakdown voltage of 192 V is measured for LGD = 355 nm resulting in average breakdown field (E_AVG) of 5.4 MV/cm. This E_AVG is the highest reported among all sub-micron gate length lateral FETs. RF measurements on 200 nm Silicon Nitride (Si3N4) passivated device shows a current gain cut off frequency (f_T) of 11 GHz and record power gain cut off frequency (f_MAX) of 48 GHz. The f_T.V_Br product is 2.11 THz.V for 192 V breakdown voltage. The switching figure of merit exceeds that of silicon and is comparable to mature wide-band gap devices.
